F60W60CP Specs and Replacement
Type Designator: F60W60CP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 165 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO-3P
F60W60CP substitution
- MOSFET ⓘ Cross-Reference Search
F60W60CP datasheet
Detailed specifications: F5048 , F5055 , F55NF06 , F5F50VX2 , F5F90HVX2 , F5S90HVX2 , F5V50 , F5V90HVX2 , IRLB3034 , F6B52HP , F6F70HVX2 , F7F60C3M , F7W90HVX2 , FA38SA50LCP , FA57SA50LCP , FC40SA50FKP , FC4A22050L .
History: FQA11N90C
Keywords - F60W60CP MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FQA11N90C
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