F7W90HVX2 Specs and Replacement
Type Designator: F7W90HVX2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-3P
F7W90HVX2 substitution
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F7W90HVX2 datasheet
f7w90hvx2.pdf
SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2674 Case MTO-3P (Unit mm) ( F7W90HVX2 ) 900V 7A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC... See More ⇒
Detailed specifications: F5F90HVX2, F5S90HVX2, F5V50, F5V90HVX2, F60W60CP, F6B52HP, F6F70HVX2, F7F60C3M, K2611, FA38SA50LCP, FA57SA50LCP, FC40SA50FKP, FC4A22050L, FC4B21080L, FC4B21300L, FC4B21320L, FC4B22070L
Keywords - F7W90HVX2 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BUK72150-55A | NCEP0160A
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