FK3506010L Datasheet and Replacement
Type Designator: FK3506010L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: SC-85
FK3506010L substitution
FK3506010L Datasheet (PDF)
fk3506010l.pdf

Doc No. TT4-EA-12624Revision. 3Product StandardsMOS FETFK3506010LFK3506010LSilicon N-channel MOS FETUnit : mm For switching2.0FK330601 in SMini3 type package 0.3 0.133 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)12 Marking Symbol :CV0.9(0.65)(0.65) Packaging1.3 Emb
fk350601.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK350601Silicon N-channel MOS FETFor switching circuits Overview PackageFK350601 is N-channel small signal MOS FET employed small size surface Codemounting package. SMini3-F2-B Pin Name Features 1: Gate Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.0 V) 2: Source High-spe
fk350301.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK350301Silicon N-channel MOS FETFor switching circuits Overview PackageFK350301 is N-channel small signal MOS FET employed small size surface Codemounting package. SMini3-F2-BPackage dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) Pin
Datasheet: FK3303010L , FK330307 , FK330308 , FK330309 , FK330601 , FK3306010L , FK350301 , FK350601 , 5N65 , FK360602 , FK390601 , FK3906010L , FK3F0301 , FK3F0308 , FK4B0110 , FK4B0111 , FK4B0112 .
History: AP2761I-H-HF | AON6754 | DMN2400UV | GT4953 | RQK0201QGDQA | RQK0202RGDQA | FK330309
Keywords - FK3506010L MOSFET datasheet
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History: AP2761I-H-HF | AON6754 | DMN2400UV | GT4953 | RQK0201QGDQA | RQK0202RGDQA | FK330309



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