All MOSFET. FK3F0301 Datasheet

 

FK3F0301 Datasheet and Replacement


   Type Designator: FK3F0301
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: ML3-N4-B
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FK3F0301 Datasheet (PDF)

 ..1. Size:261K  panasonic
 fk3f0301.pdf pdf_icon

FK3F0301

This product complies with the RoHS Directive (EU 2002/95/EC).FK3F0301Silicon N-channel MOS FETFor switching circuitsFK330301 in Lead-less type package Overview PackageFK3F0301 is N-channel small signal MOS FET employed small size surface Codemounting package. ML3-N4-BPackage dimension clicks here. Click! Features Low drain-source ON resistance: RDS(

 7.1. Size:422K  panasonic
 fk3f0308.pdf pdf_icon

FK3F0301

Doc No. TT4-EA-14911Revision. 1Product StandardsMOS FETFK3F03080LFK3F03080LSilicon N-channel MOSFETUnit : mm For switching circuits0.63 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) Marking Symbol :X812 Packaging0.39Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (s

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