FK3F0301 Datasheet and Replacement
Type Designator: FK3F0301
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: ML3-N4-B
FK3F0301 substitution
FK3F0301 Datasheet (PDF)
fk3f0301.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK3F0301Silicon N-channel MOS FETFor switching circuitsFK330301 in Lead-less type package Overview PackageFK3F0301 is N-channel small signal MOS FET employed small size surface Codemounting package. ML3-N4-BPackage dimension clicks here. Click! Features Low drain-source ON resistance: RDS(
fk3f0308.pdf

Doc No. TT4-EA-14911Revision. 1Product StandardsMOS FETFK3F03080LFK3F03080LSilicon N-channel MOSFETUnit : mm For switching circuits0.63 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) Marking Symbol :X812 Packaging0.39Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (s
Datasheet: FK330601 , FK3306010L , FK350301 , FK350601 , FK3506010L , FK360602 , FK390601 , FK3906010L , 20N50 , FK3F0308 , FK4B0110 , FK4B0111 , FK4B0112 , FK6K0201 , FK6K02010L , FK6K0612 , FK8V0302 .
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