FK6K0612 Datasheet and Replacement
Type Designator: FK6K0612
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: SC-113DA
FK6K0612 substitution
FK6K0612 Datasheet (PDF)
fk6k0612.pdf

Doc No. TT4-EA-14979Revision. 1Product StandardsMOS FETFK6K06120LFK6K06120LSingle N-channel MOS FET Package dimensionUnit: mmFor lithium-ion secondary battery protection circuitsFor load switching 2.00.2 0.136 5 4 Features Low drain-source ON resistance:RDS(on) typ. = 60 m (VGS = 4.5 V) Low drive voltage: 2.5 V drive RoHS compliant (EU RoHS / UL-94
fk6k0201.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK6K0201Silicon N-channel MOS FETFor switch circuits Overview PackageFK6K0201 is N-channel signal type MOS FET employed small size surface Codemounting package. WSMini6-F1-B Pin Name 1: Drain 4: Source Features 2: Drain 5: Drain Low drain-source ON resistance: RDS(on) typ. = 13 mW (VGS =
fk6k02010l.pdf

Doc No. TT4-EA-12566Revision. 2Product StandardsMOS FETFK6K02010LFK6K02010LSilicon N-channel MOS FETUnit : mm 2.0For switching0.2 0.136 5 4 Features Low drain-source On-state Resistance:RDS(on)typ. = 13 m VGS = 4.5 V) Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 30.7
Datasheet: FK3906010L , FK3F0301 , FK3F0308 , FK4B0110 , FK4B0111 , FK4B0112 , FK6K0201 , FK6K02010L , 5N65 , FK8V0302 , FK8V0303 , FK8V0304 , FK8V03040L , FK8V03050L , FK8V0306 , FK8V0606 , FK8V06120L .
History: F5020-S | SPU07N60C3
Keywords - FK6K0612 MOSFET datasheet
FK6K0612 cross reference
FK6K0612 equivalent finder
FK6K0612 lookup
FK6K0612 substitution
FK6K0612 replacement
History: F5020-S | SPU07N60C3



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