All MOSFET. SDF054JAB-S Datasheet

 

SDF054JAB-S MOSFET. Datasheet pdf. Equivalent


   Type Designator: SDF054JAB-S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 150(max) nC
   trⓘ - Rise Time: 450(max) nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO254

 SDF054JAB-S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SDF054JAB-S Datasheet (PDF)

 8.1. Size:169K  solitron
 sdf054.pdf

SDF054JAB-S

 9.1. Size:119K  samhop
 sdf05n40t.pdf

SDF054JAB-S SDF054JAB-S

SDF05N40TaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.400V 5A 2.4 @ VGS=10V Suface Mount Package.DGG D SSDF SERIESTO-220FSORDERING INFORMATIONOrdering Code Package Marking Code Delivery Mode RoHS StatusTu

 9.2. Size:190K  samhop
 sdf05n50 sdp05n50.pdf

SDF054JAB-S SDF054JAB-S

SDP05N50SDF05N50aS mHop Microelectronics C orp.Ver 2.3N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.500V 5A 1.35 @ VGS=10V TO-220 and TO-220F Package.DGG D S G D SSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package Ma

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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