All MOSFET. SLF10N70C Datasheet

 

SLF10N70C Datasheet and Replacement


   Type Designator: SLF10N70C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 164 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F
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SLF10N70C Datasheet (PDF)

 ..1. Size:1390K  maple semi
 slp10n70c slf10n70c.pdf pdf_icon

SLF10N70C

SLP10N70C/SLF10N70C700V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 700V, RDS(on) typ. = 0.9@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 40nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 8.1. Size:1218K  maple semi
 slp10n60c slf10n60c.pdf pdf_icon

SLF10N70C

SLP10N60C / SLF10N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 600V, RDS(on)typ. = 0.62@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 8.2. Size:1189K  maple semi
 slp10n65c slf10n65c.pdf pdf_icon

SLF10N70C

SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

 8.3. Size:666K  maple semi
 slp10n65s slf10n65s.pdf pdf_icon

SLF10N70C

LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CS4N60D | SLF13N50A | BRCS200P03DP | HPLU3103 | SML50S26 | LKK47-06C5 | TSM4424CS

Keywords - SLF10N70C MOSFET datasheet

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