SLF10N70C MOSFET Datasheet: N-Ch, 700V, 10A. Full specification with pinout and replacement list

SLF10N70C Specs and Replacement

Type Designator: SLF10N70C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.2 nS

Cossⓘ - Output Capacitance: 164 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO220F

SLF10N70C substitution

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SLF10N70C datasheet

..1. Size:1390K maple semi
slp10n70c slf10n70c.pdf pdf_icon

SLP10N70C/SLF10N70C 700V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 700V, RDS(on) typ. = 0.9 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 40nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒

8.1. Size:1218K maple semi
slp10n60c slf10n60c.pdf pdf_icon

SLP10N60C / SLF10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 600V, RDS(on)typ. = 0.62 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 36.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi... See More ⇒

8.2. Size:1189K maple semi
slp10n65c slf10n65c.pdf pdf_icon

SLP10N65C / SLF10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ. = 0.678 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 38nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switchi... See More ⇒

8.3. Size:666K maple semi
slp10n65s slf10n65s.pdf pdf_icon

LEAD FREE Pb RoHS SLP10N65S/ SLF10N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 650V, RDS(on) typ=0.8 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switchi... See More ⇒