All MOSFET. SDF10N100JEC Datasheet

 

SDF10N100JEC MOSFET. Datasheet pdf. Equivalent


   Type Designator: SDF10N100JEC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 145 nC
   trⓘ - Rise Time: 110(max) nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO254

 SDF10N100JEC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SDF10N100JEC Datasheet (PDF)

 5.1. Size:165K  solitron
 sdf10n100.pdf

SDF10N100JEC

 8.1. Size:453K  samhop
 sdf10n60 sdp10n60 sdp10n60.pdf

SDF10N100JEC SDF10N100JEC

SDP10N60SDF10N60aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () TypVDSS IDRugged and reliable.600V 10A 0.62 @ VGS=10V TO-220 and TO-220F Package.DG D S G D S GSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package M

 8.2. Size:159K  solitron
 sdf10n90.pdf

SDF10N100JEC

 8.3. Size:165K  solitron
 sdf10n60.pdf

SDF10N100JEC

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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