All MOSFET. PK6D0BA Datasheet

 

PK6D0BA Datasheet and Replacement


   Type Designator: PK6D0BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: PDFN5X6P
 

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PK6D0BA Datasheet (PDF)

 ..1. Size:229K  1
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PK6D0BA

N-Channel Enhancement Mode PK6D0BANIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-FreeDD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 10.5m 40A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 30 VGate-Source Voltage

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PK6D0BA

PK6D0BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID10.5m @VGS = 10V30V 40APDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C40IDContinuous Drain CurrentTC = 100 C25IDM80Pulsed Drain Curren

 ..3. Size:229K  niko-sem
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PK6D0BA

N-Channel Enhancement Mode PK6D0BANIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-FreeDD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 10.5m 40A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 30 VGate-Source Voltage

Datasheet: 3N128 , 3N143 , APM2509NU , CHM04N10ZPT , DTP4503 , IRF60R217 , PFP12N65 , PFF12N65 , IRF4905 , SVF830T , SVF830D , SVF830MJ , SVF830FJ , SVF830F , N0100P , N0300N , N0300P .

History: IRF7457PBF | NTMFS5C609NLT1G | SRC65R290E | 2P998BC | KP8M6 | PSMN7R5-30YLD | DMZ6005E

Keywords - PK6D0BA MOSFET datasheet

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