SVF830T Datasheet and Replacement
Type Designator: SVF830T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 87.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37.4 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
SVF830T substitution
SVF830T Datasheet (PDF)
svf830t-d-mj-fj-f.pdf

SVF830T/D/MJ/FJ/F_Datasheet 5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perfo
Datasheet: 3N143 , APM2509NU , CHM04N10ZPT , DTP4503 , IRF60R217 , PFP12N65 , PFF12N65 , PK6D0BA , 5N60 , SVF830D , SVF830MJ , SVF830FJ , SVF830F , N0100P , N0300N , N0300P , N0301N .
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