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N0300N Specs and Replacement

Type Designator: N0300N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SC-96

N0300N substitution

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N0300N datasheet

 ..1. Size:251K  renesas
n0300n.pdf pdf_icon

N0300N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.1. Size:54K  motorola
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N0300N

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by VN0300L/D TMOS FET Transistor VN0300L 3 DRAIN N Channel Enhancement Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V 1 2 3 Drain Gate Voltage VDGR 60 V Gate Source Voltage CASE 29 04, STYLE 22 Continuous VGS 20 Vdc TO 92 (TO ... See More ⇒

 9.2. Size:255K  renesas
n0300p.pdf pdf_icon

N0300N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.3. Size:340K  supertex
vn0300 vn0300 vn0300l.pdf pdf_icon

N0300N

VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes Free from secondary breakdown a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power handling capab... See More ⇒

Detailed specifications: PFF12N65, PK6D0BA, SVF830T, SVF830D, SVF830MJ, SVF830FJ, SVF830F, N0100P, SKD502T, N0300P, N0301N, N0301P, N0302P, N0400P, N0412N, N0413N, NT4N03

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