NTB18N06L MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB18N06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 7.3 nC
trⓘ - Rise Time: 121 nS
Cossⓘ - Output Capacitance: 106 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: D2PAK
NTB18N06L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB18N06L Datasheet (PDF)
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NTP18N06L, NTB18N06LPower MOSFET15 Amps, 60 Volts,Logic LevelN-Channel TO-220 and D2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridge15 AMPERES, 60 VOLTScircuits.RDS(on) = 100 mWFeaturesN-Channel Pb-Free Packages are AvailableDTypical Applications Power Supplies
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NTP18N06, NTB18N06Power MOSFET15 A, 60 V, N-Channel TO-220 & D2PAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.N-Channelhttp://onsemi.comTypical Applications D Power SuppliesV(BR)DSS RDS(on) TYP ID MAX Converters60 V 90 mW @ 10 V 15 A Power Motor ControlsG Bridge Cir
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