NTB27N06LT4 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB27N06LT4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 88.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 15.2 nC
trⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 227 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: D2PAK
NTB27N06LT4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB27N06LT4 Datasheet (PDF)
..1. Size:272K onsemi
ntb27n06lt4 ntp27n06l.pdf
ntb27n06lt4 ntp27n06l.pdf
NTP27N06L, NTB27N06LPower MOSFET27 Amps, 60 Volts, Logic LevelN-Channel TO-220 and D2PAKDesigned for low voltage, high speed switching applications inpower supplies, converters, power motor controls and bridge circuits.http://onsemi.comTypical Applications Power Supplies27 AMPERES Converters60 VOLTS Power Motor ControlsRDS(on) = 48 m Bridge CircuitsN-
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
