NTB30N06L MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB30N06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 88.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: D2PAK
NTB30N06L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB30N06L Datasheet (PDF)
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