All MOSFET. NTB5404NT4G Datasheet

 

NTB5404NT4G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTB5404NT4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 254 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 167 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 125 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 1075 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: D2PAK

 NTB5404NT4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTB5404NT4G Datasheet (PDF)

 ..1. Size:117K  onsemi
 ntb5404nt4g ntp5404nrg.pdf

NTB5404NT4G NTB5404NT4G

NTB5404N, NTP5404N,NVB5404NPower MOSFET40 V, 167 A, Single N-Channel, D2PAK &TO-220Features Low RDS(on)http://onsemi.com High Current CapabilityID MAX Low Gate ChargeV(BR)DSS RDS(ON) MAX (Note 1) AEC-Q101 Qualified and PPAP Capable - NVB5404N40 V 4.5 mW @ 10 V 167 A These Devices are Pb-Free and are RoHS CompliantApplicationsD Electronic Brake

 6.1. Size:128K  onsemi
 ntb5404n ntp5404n.pdf

NTB5404NT4G NTB5404NT4G

NTB5404N, NTP5404NPower MOSFET40 V, 136 A, Single N-Channel, D2PAK &TO-220Features Low RDS(on) http://onsemi.com High Current CapabilityID MAX Low Gate ChargeV(BR)DSS RDS(ON) TYP (Note 1) This is a Pb-Free Device40 V 3.5 mW @ 10 V 136 AApplicationsD Electronic Brake Systems Electronic Power SteeringN-Channel Bridge CircuitsGMAXIMUM RATI

 8.1. Size:111K  onsemi
 ntb5405ng.pdf

NTB5404NT4G NTB5404NT4G

NTB5405N, NVB5405NPower MOSFET40 V, 116 A, Single N-Channel, D2PAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC-Q101 Qualified and PPAP Capable - NVB5405NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 4.9 m @ 10 V 116 AApplications Electronic Brake SystemsN-Channel

 8.2. Size:122K  onsemi
 ntb5405n.pdf

NTB5404NT4G NTB5404NT4G

NTB5405NPower MOSFET40 V, 116 A, Single N-Channel, D2PAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge These are Pb-Free DevicesID MAXApplicationsV(BR)DSS RDS(ON) TYP (Note 1) Electronic Brake Systems40 V 4.9 m @ 10 V 116 A Electronic Power Steering Bridge CircuitsN-ChannelMAXIMUM RATINGS (TJ = 25C unless

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