NTB6410ANG Specs and Replacement
Type Designator: NTB6410ANG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 76 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 650 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: D2PAK
NTB6410ANG substitution
- MOSFET ⓘ Cross-Reference Search
NTB6410ANG datasheet
ntb6410ang ntp6410ang.pdf
NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring 100 V 13 mW @ 10 V 76 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-Chan... See More ⇒
ntb6410an ntp6410an.pdf
NTB6410AN, NTP6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 13 mW @ 10 V 76 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G... See More ⇒
ntb6410an ntp6410an nvb6410an.pdf
NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features www.onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring 100 V 13 mW @ 10 V 76 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-Channel... See More ⇒
ntb6412ang ntp6412ang.pdf
NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable ... See More ⇒
Detailed specifications: NTB5411NT4G, NTB5412NT4G, NTB5426NT4G, NTB5605PG, NTB5860N, NTB5860NL, NTB60N06G, NTB60N06L, IRF1405, NTB6411ANG, NTB6412ANG, NTB6413ANG, NTB65N02R, NTB65N02RT4, NTB75N03-006, NTB75N03L09T4, NTB75N03R
Keywords - NTB6410ANG MOSFET specs
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