NTB6412ANG PDF and Equivalents Search

 

NTB6412ANG Specs and Replacement

Type Designator: NTB6412ANG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0182 Ohm

Package: D2PAK

NTB6412ANG substitution

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NTB6412ANG datasheet

 ..1. Size:138K  onsemi
ntb6412ang ntp6412ang.pdf pdf_icon

NTB6412ANG

NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable ... See More ⇒

 5.1. Size:271K  onsemi
ntb6412an ntp6412an nvb6412an.pdf pdf_icon

NTB6412ANG

NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) www.onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable Th... See More ⇒

 5.2. Size:139K  onsemi
ntb6412an ntp6412an.pdf pdf_icon

NTB6412ANG

NTB6412AN, NTP6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 18.2 mW @ 10 V 58 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channe... See More ⇒

 8.1. Size:113K  onsemi
ntb6413ang ntp6413ang.pdf pdf_icon

NTB6412ANG

NTB6413AN, NTP6413AN, NVB6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 28 mW @ 10 V 42 A Qualified and PPAP Capable The... See More ⇒

Detailed specifications: NTB5426NT4G, NTB5605PG, NTB5860N, NTB5860NL, NTB60N06G, NTB60N06L, NTB6410ANG, NTB6411ANG, IRFZ48N, NTB6413ANG, NTB65N02R, NTB65N02RT4, NTB75N03-006, NTB75N03L09T4, NTB75N03R, NTB75N06G, NTB75N06L

Keywords - NTB6412ANG MOSFET specs

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