NTB6413ANG Specs and Replacement
Type Designator: NTB6413ANG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 84 nS
Cossⓘ - Output Capacitance: 280 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: D2PAK
NTB6413ANG substitution
- MOSFET ⓘ Cross-Reference Search
NTB6413ANG datasheet
ntb6413ang ntp6413ang.pdf
NTB6413AN, NTP6413AN, NVB6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 28 mW @ 10 V 42 A Qualified and PPAP Capable The... See More ⇒
ntb6413an ntp6413an nvb6413an.pdf
NTB6413AN, NTP6413AN, NVB6413AN MOSFET Power, N-Channel 100 V, 42 A, 28 mW www.onsemi.com Features Low RDS(on) ID MAX High Current Capability V(BR)DSS RDS(ON) MAX (Note 1) 100% Avalanche Tested 100 V 28 mW @ 10 V 42 A NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-C... See More ⇒
ntb6413an ntp6413an.pdf
NTB6413AN, NTP6413AN N-Channel Power MOSFET 100 V, 42 A, 28 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) MAX (Note 1) MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) 100 V 28 mW @ 10 V 42 A Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 100 V N-Channel G... See More ⇒
ntb6412ang ntp6412ang.pdf
NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable ... See More ⇒
Detailed specifications: NTB5605PG, NTB5860N, NTB5860NL, NTB60N06G, NTB60N06L, NTB6410ANG, NTB6411ANG, NTB6412ANG, IRFZ46N, NTB65N02R, NTB65N02RT4, NTB75N03-006, NTB75N03L09T4, NTB75N03R, NTB75N06G, NTB75N06L, NTB85N03
Keywords - NTB6413ANG MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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