All MOSFET. NTD20P06L-1G Datasheet

 

NTD20P06L-1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD20P06L-1G
   Marking Code: 20P06L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 15.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 207 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: DPAK

 NTD20P06L-1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD20P06L-1G Datasheet (PDF)

 ..1. Size:146K  onsemi
 ntd20p06l-001 ntd20p06l-1g ntd20p06lg ntd20p06lt4g ntdv20p06l.pdf

NTD20P06L-1G NTD20P06L-1G

NTD20P06L, NTDV20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching AEC Q101 Qualified - NTDV20P06LID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP (Note 1)Applications -60 V 130 mW @ -5.0 V -15.5 A Bridge Cir

 4.1. Size:112K  onsemi
 ntd20p06l-d.pdf

NTD20P06L-1G NTD20P06L-1G

NTD20P06LPower MOSFET-60 V, -15.5 A, Single P-Channel, DPAKFeatures Withstands High Energy in Avalanche and Commutation Modeshttp://onsemi.com Low Gate Charge for Fast Switching These are Pb-Free DevicesID MAXV(BR)DSS RDS(on) TYP (Note 1)Applications Bridge Circuits-60 V 130 mW @ -5.0 V -15.5 A Power Supplies, Power Motor Controls DC-DC Conversion

 5.1. Size:139K  onsemi
 ntd20p06l ntdv20p06l.pdf

NTD20P06L-1G NTD20P06L-1G

NTD20P06L, NTDV20P06LMOSFET Power, Single,P-Channel, DPAK-60 V, -15.5 AFeatureswww.onsemi.com Withstands High Energy in Avalanche and Commutation Modes Low Gate Charge for Fast SwitchingID MAX AEC Q101 Qualified - NTDV20P06LV(BR)DSS RDS(on) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant-60 V 130 mW @ -5.0 V -15.5 AApplications Bridge

 5.2. Size:870K  cn vbsemi
 ntd20p06l.pdf

NTD20P06L-1G NTD20P06L-1G

NTD20P06Lwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sym

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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