NTD4806N-1G Specs and Replacement
Type Designator: NTD4806N-1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 79 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29.7 nS
Cossⓘ -
Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DPAK
IPAK
- MOSFET ⓘ Cross-Reference Search
NTD4806N-1G datasheet
..1. Size:153K onsemi
ntd4806n-1g.pdf 
NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.0 mW @... See More ⇒
6.1. Size:124K onsemi
ntd4806n.pdf
NTD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 6.0 mW @ 10 V CPU Power Delivery 30 V 76 A 9.4 mW @ 4.5 V DC-DC Con... See More ⇒
8.1. Size:116K onsemi
ntd4805n nvd4805n.pdf
NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q... See More ⇒
8.2. Size:150K onsemi
ntd4809n-1g.pdf
NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mW @ 10 V CPU Power Delivery 30 V 58 A 14 mW @ 4.5 V DC-DC Conv... See More ⇒
8.3. Size:294K onsemi
ntd4805n-d.pdf
NTD4805N Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 5.0 m @10V CPU Power Delivery 30 V 88 A 7.4 m @4.5V DC--DC Co... See More ⇒
8.4. Size:117K onsemi
ntd4809n nvd4809n.pdf
NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 mW @ 10 V 30 V 58 A ... See More ⇒
8.5. Size:330K onsemi
ntd4809nhg.pdf
NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m @10V 30 V 58 A CPU Power Delivery 12.5 m @4.5 V DC--DC... See More ⇒
8.6. Size:320K onsemi
ntd4808n-d.pdf
NTD4808N Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 8.0 m @10V CPU Power Delivery 30 V 63 A 12.4 m @4.5 V DC--DC... See More ⇒
8.7. Size:110K onsemi
ntd4809na-1g.pdf
NTD4809NA Advance Information Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices 9.0 mW @ 10 V 25 V 58 A Applications 14 mW @ 4.5 V CPU Power D... See More ⇒
8.8. Size:270K onsemi
ntd4809n-d.pdf
NTD4809N Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m @10V CPU Power Delivery 30 V 58 A 14 m @4.5 V DC--DC Co... See More ⇒
8.9. Size:157K onsemi
ntd4804n-1g.pdf
NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 ... See More ⇒
8.10. Size:153K onsemi
ntd4804na-1g.pdf
NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices 4.0 mW @ 10 V 25 V 117 A Applications 5.5 mW @ 4.5 V CPU Power... See More ⇒
8.11. Size:153K onsemi
ntd4809nh-1g.pdf
NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4809NH V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 m... See More ⇒
8.12. Size:89K onsemi
ntd4804n nvd4804n.pdf
NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 A ... See More ⇒
8.13. Size:275K onsemi
ntd4804n-d.pdf
NTD4804N Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 4.0 m @10V CPU Power Delivery 30 V 117 A 5.5 m @4.5V DC--DC ... See More ⇒
8.14. Size:153K onsemi
ntd4805n-1g ntd4805nt4g.pdf
NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4805N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 5.0 mW @... See More ⇒
Detailed specifications: NTD3817N-1G, NTD40N03R-1G, NTD40N03RG, NTD4302-1G, NTD4804N-1G, NTD4804NA-1G, NTD4805N-1G, NTD4805NT4G, AON7410, NTD4809N-1G, NTD4809NA-1G, NTD4809NH-1G, NTD4810N-1G, NTD4810NH-1G, NTD4813N-1G, NTD4813NH-1G, NTD4815N-1G
Keywords - NTD4806N-1G MOSFET specs
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