NTD4856N-1G PDF and Equivalents Search

 

NTD4856N-1G Specs and Replacement

Type Designator: NTD4856N-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 89 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22.5 nS

Cossⓘ - Output Capacitance: 567 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm

Package: DPAK IPAK

NTD4856N-1G substitution

- MOSFET ⓘ Cross-Reference Search

 

NTD4856N-1G datasheet

 ..1. Size:155K  onsemi
 ntd4856n-1g.pdf pdf_icon

NTD4856N-1G

NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring 4.7 mW @ 10 V Unique Site ... See More ⇒

 6.1. Size:296K  onsemi
 ntd4856n.pdf pdf_icon

NTD4856N-1G

NTD4856N Power MOSFET 25 V, 89 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 4.7 m @10V 25 V 89 A Applications 6.8 m @4.5 V VCORE Ap... See More ⇒

 8.1. Size:143K  onsemi
 ntd4858n.pdf pdf_icon

NTD4856N-1G

NTD4858N MOSFET Power, Single, N-Channel, DPAK/IPAK 25 V, 73 A Features http //onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(ON) MAX ID MAX Low Capacitance to Minimize Driver Losses 6.2 mW @ 10 V Optimized Gate Charge to Minimize Switching Losses 25 V 73 A These are Pb-Free Devices 9.3 mW @ 4.5 V Applications D VC... See More ⇒

 8.2. Size:300K  onsemi
 ntd4858n-1g ntd4858n.pdf pdf_icon

NTD4856N-1G

NTD4858N Power MOSFET 25 V, 73 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 6.2 m @10V 25 V 73 A Applications 9.3 m @4.5 V VCORE Ap... See More ⇒

SHOW MORE

Detailed specifications: NTD4810NH-1G, NTD4813N-1G, NTD4813NH-1G, NTD4815N-1G, NTD4815NH-1G, NTD4815NT4G, NTD4854N-1G, NTD4855N-1G, AO4407, NTD4857N-1G, NTD4858N-1G, NTD4860N-1G, NTD4863N-1G, NTD4865N-1G, NTD4904N-1G, NTD4909N-1G, NTD4910N-1G

Keywords - NTD4856N-1G MOSFET specs

 NTD4856N-1G cross reference

 NTD4856N-1G equivalent finder

 NTD4856N-1G pdf lookup

 NTD4856N-1G substitution

 NTD4856N-1G replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.