NTD4858N-1G MOSFET Datasheet: N-Ch, 25V, 73A. Full specification with pinout and replacement list

NTD4858N-1G Specs and Replacement

   Type Designator: NTD4858N-1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 54.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 73 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 405 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: DPAK IPAK

NTD4858N-1G substitution

- MOSFET ⓘ Cross-Reference Search

NTD4858N-1G datasheet

..1. Size:300K onsemi
ntd4858n-1g ntd4858n.pdf pdf_icon

NTD4858N Power MOSFET 25 V, 73 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 6.2 m @10V 25 V 73 A Applications 9.3 m @4.5 V VCORE Ap... See More ⇒

6.1. Size:143K onsemi
ntd4858n.pdf pdf_icon

NTD4858N MOSFET Power, Single, N-Channel, DPAK/IPAK 25 V, 73 A Features http //onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(ON) MAX ID MAX Low Capacitance to Minimize Driver Losses 6.2 mW @ 10 V Optimized Gate Charge to Minimize Switching Losses 25 V 73 A These are Pb-Free Devices 9.3 mW @ 4.5 V Applications D VC... See More ⇒

8.1. Size:271K onsemi
ntd4857n-1g ntd4857n.pdf pdf_icon

NTD4857N Power MOSFET 25 V, 78 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 5.7 m @10V 25 V 78 A Applications 8.0 m @4.5 V VCORE Ap... See More ⇒

8.2. Size:155K onsemi
ntd4856n-1g.pdf pdf_icon

NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring 4.7 mW @ 10 V Unique Site ... See More ⇒