All MOSFET. NTD4863N-1G Datasheet

 

NTD4863N-1G Datasheet and Replacement


   Type Designator: NTD4863N-1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19.7 nS
   Cossⓘ - Output Capacitance: 253 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
   Package: DPAK IPAK
 

 NTD4863N-1G substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTD4863N-1G Datasheet (PDF)

 ..1. Size:296K  onsemi
 ntd4863n-1g ntd4863n-d.pdf pdf_icon

NTD4863N-1G

NTD4863NPower MOSFET25 V, 49 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices9.3 m @10V25 V49 AApplications14 m @4.5 V VCORE App

 8.1. Size:100K  onsemi
 ntd4865n.pdf pdf_icon

NTD4863N-1G

NTD4865NPower MOSFET25 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices10.9 mW @ 10 V25 V44 AApplications17.2 mW @ 4.5 V VCORE A

 8.2. Size:118K  onsemi
 ntd4860n.pdf pdf_icon

NTD4863N-1G

NTD4860NPower MOSFET25 V, 65 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices7.5 mW @ 10 V25 V65 A11.1 mW @ 4.5 VApplications VCORE App

 8.3. Size:282K  onsemi
 ntd4860n-1g ntd4860n.pdf pdf_icon

NTD4863N-1G

NTD4860NPower MOSFET25 V, 65 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices7.5 m @10V25 V65 AApplications11.1 m @4.5 V VCORE A

SHOW MORE

Datasheet: NTD4815NH-1G , NTD4815NT4G , NTD4854N-1G , NTD4855N-1G , NTD4856N-1G , NTD4857N-1G , NTD4858N-1G , NTD4860N-1G , P0903BDG , NTD4865N-1G , NTD4904N-1G , NTD4909N-1G , NTD4910N-1G , NTD4960N-1G , NTD4963N-1G , NTD4965N-1G , NTD4969N-1G .

History: NCE30H10BK | DMP3028LFDE | 2SK3112-S | STK22N6F3

Keywords - NTD4863N-1G MOSFET datasheet

 NTD4863N-1G cross reference
 NTD4863N-1G equivalent finder
 NTD4863N-1G lookup
 NTD4863N-1G substitution
 NTD4863N-1G replacement

 

 
Back to Top

 


 
.