NTD4969N-1G PDF and Equivalents Search

 

NTD4969N-1G Specs and Replacement

Type Designator: NTD4969N-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 347 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DPAK IPAK

NTD4969N-1G substitution

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NTD4969N-1G datasheet

 ..1. Size:114K  onsemi
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NTD4969N-1G

NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0 ... See More ⇒

 5.1. Size:118K  onsemi
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NTD4969N-1G

NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0 ... See More ⇒

 6.1. Size:82K  onsemi
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NTD4969N-1G

NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0 ... See More ⇒

 8.1. Size:123K  1
ntd4963ng.pdf pdf_icon

NTD4969N-1G

NTD4963N Power MOSFET 30 V, 44 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.6 ... See More ⇒

Detailed specifications: NTD4863N-1G, NTD4865N-1G, NTD4904N-1G, NTD4909N-1G, NTD4910N-1G, NTD4960N-1G, NTD4963N-1G, NTD4965N-1G, 20N50, NTD4970N-1G, NTD50N03R, NTD5406NG, NTD5407NG, NTD5413NT4G, NTD5414NT4G, NTD5802NT4G, NTD5804NT4G

Keywords - NTD4969N-1G MOSFET specs

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