NTD5802NT4G Specs and Replacement
Type Designator: NTD5802NT4G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 93.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 101 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 850 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: DPAK
NTD5802NT4G substitution
- MOSFET ⓘ Cross-Reference Search
NTD5802NT4G datasheet
ntd5802nt4g.pdf
NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID AEC Q101 Qualified 4.4 mW @ 10 V 101 A 100% Avalanche Tested 40 V AEC Q101 Qualified - NVD580... See More ⇒
ntd5802n nvd5802n.pdf
NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID 100% Avalanche Tested 4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring ... See More ⇒
ntd5802n-d.pdf
NTD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID AEC Q101 Qualified 4.4 mW @ 10 V 101 A 100% Avalanche Tested 40 V These are Pb-Free Devices 7.8 mW @ 5.... See More ⇒
ntd5805nt4g.pdf
NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 16 mW @ 5.0 V Qualified and PPAP Capable 40 V 51 A These Devices... See More ⇒
Detailed specifications: NTD4965N-1G, NTD4969N-1G, NTD4970N-1G, NTD50N03R, NTD5406NG, NTD5407NG, NTD5413NT4G, NTD5414NT4G, P60NF06, NTD5804NT4G, NTD5805NT4G, NTD5806NT4G, NTD5807NT4G, NTD5862N-1G, 2SJ0672, 7N60L-A-TA3, 7N60L-B-TA3
Keywords - NTD5802NT4G MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: C2M090W070 | WMR15N02T1
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