All MOSFET. NTD5802NT4G Datasheet

 

NTD5802NT4G Datasheet and Replacement


   Type Designator: NTD5802NT4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 93.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 101 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: DPAK
 

 NTD5802NT4G substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTD5802NT4G Datasheet (PDF)

 ..1. Size:136K  onsemi
ntd5802nt4g.pdf pdf_icon

NTD5802NT4G

NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID AEC Q101 Qualified4.4 mW @ 10 V 101 A 100% Avalanche Tested40 V AEC Q101 Qualified - NVD580

 6.1. Size:118K  onsemi
ntd5802n nvd5802n.pdf pdf_icon

NTD5802NT4G

NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring

 6.2. Size:109K  onsemi
ntd5802n-d.pdf pdf_icon

NTD5802NT4G

NTD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID AEC Q101 Qualified4.4 mW @ 10 V 101 A 100% Avalanche Tested40 V These are Pb-Free Devices 7.8 mW @ 5.

 8.1. Size:133K  onsemi
ntd5805nt4g.pdf pdf_icon

NTD5802NT4G

NTD5805N, NVD5805NPower MOSFET40 V, 51 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q10116 mW @ 5.0 VQualified and PPAP Capable40 V51 A These Devices

Datasheet: NTD4965N-1G , NTD4969N-1G , NTD4970N-1G , NTD50N03R , NTD5406NG , NTD5407NG , NTD5413NT4G , NTD5414NT4G , AO3401 , NTD5804NT4G , NTD5805NT4G , NTD5806NT4G , NTD5807NT4G , NTD5862N-1G , 2SJ0672 , 7N60L-A-TA3 , 7N60L-B-TA3 .

History: APT4080BN | 25N10G-TM3-T

Keywords - NTD5802NT4G MOSFET datasheet

 NTD5802NT4G cross reference
 NTD5802NT4G equivalent finder
 NTD5802NT4G lookup
 NTD5802NT4G substitution
 NTD5802NT4G replacement

 

 
Back to Top

 


 
.