NTD5804NT4G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD5804NT4G
Marking Code: 5804N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 69 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 18.7 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: DPAK IPAK
NTD5804NT4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD5804NT4G Datasheet (PDF)
ntd5804nt4g.pdf
NTD5804N, NTDV5804NPower MOSFET40 V, 69 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NTDV5804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant12 mW @ 5.0 V40 V69 AApplications8.5 mW @ 10 V CCFL Backlight
ntd5804n.pdf
NTD5804NPower MOSFET40 V, 69 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications12 mW @ 5.0 V40 V69 A CCFL Backlight8.5 mW @ 10 V DC Motor Control Class D AmplifierD Power Supply Secondary Side Synchronous Re
ntd5805nt4g.pdf
NTD5805N, NVD5805NPower MOSFET40 V, 51 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q10116 mW @ 5.0 VQualified and PPAP Capable40 V51 A These Devices
ntd5802nt4g.pdf
NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID AEC Q101 Qualified4.4 mW @ 10 V 101 A 100% Avalanche Tested40 V AEC Q101 Qualified - NVD580
ntd5806n.pdf
NTD5806NPower MOSFET40 V, 33 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications26 mW @ 4.5 V40 V33 A CCFL Backlight19 mW @ 10 V DC Motor Control Power Supply Secondary Side Synchronous RectificationDMAXIMUM RAT
ntd5806nt4g.pdf
NTD5806N, NVD5806NPower MOSFET40 V, 33 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5806NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant26 mW @ 4.5 V40 V33 AApplications19 mW @ 10 V CCFL Backlight D
ntd5802n nvd5802n.pdf
NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring
ntd5802n-d.pdf
NTD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID AEC Q101 Qualified4.4 mW @ 10 V 101 A 100% Avalanche Tested40 V These are Pb-Free Devices 7.8 mW @ 5.
ntd5807nt4g.pdf
NTD5807N, NVD5807NPower MOSFET40 V, 23 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5807NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant37 mW @ 4.5 V 16 A40 VApplications31 mW @ 10 V 23 A CCFL Backlight
ntd5807n-d.pdf
NTD5807NPower MOSFET40 V, 23 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications37 mW @ 4.5 V 16 A40 V CCFL Backlight31 mW @ 10 V 23 A DC Motor Control Class D AmplifierD Power Supply Secondary Side Synchr
ntd5805n.pdf
NTD5805NPower MOSFET40 V, 51 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications16 mW @ 5.0 V40 V51 A LED Backlight Driver9.5 mW @ 10 V CCFL Backlight DC Motor ControlD Power Supply Secondary Side Synchronous
ntd5803n-d.pdf
NTD5803NPower MOSFET40 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications10.1 mW @ 5.0 V 54 A40 V CCFL Backlight7.2 mW @ 10 V 76 A DC Motor Control Class D AmplifierD Power Supply Secondary Side Syn
ntd5806nt4g.pdf
NTD5806NT4Gwww.VBsemi.twN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFET
ntd5807nt.pdf
NTD5807NTwww.VBsemi.comN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFETA
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
