NTD5806NT4G PDF and Equivalents Search

 

NTD5806NT4G Specs and Replacement

Type Designator: NTD5806NT4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 93.7 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: DPAK IPAK

NTD5806NT4G substitution

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NTD5806NT4G datasheet

 ..1. Size:124K  onsemi
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NTD5806NT4G

NTD5806N, NVD5806N Power MOSFET 40 V, 33 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5806N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 26 mW @ 4.5 V 40 V 33 A Applications 19 mW @ 10 V CCFL Backlight D... See More ⇒

 ..2. Size:838K  cn vbsemi
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NTD5806NT4G

NTD5806NT4G www.VBsemi.tw N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET ... See More ⇒

 6.1. Size:125K  onsemi
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NTD5806NT4G

NTD5806N Power MOSFET 40 V, 33 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 26 mW @ 4.5 V 40 V 33 A CCFL Backlight 19 mW @ 10 V DC Motor Control Power Supply Secondary Side Synchronous Rectification D MAXIMUM RAT... See More ⇒

 8.1. Size:133K  onsemi
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NTD5806NT4G

NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 16 mW @ 5.0 V Qualified and PPAP Capable 40 V 51 A These Devices... See More ⇒

Detailed specifications: NTD50N03R, NTD5406NG, NTD5407NG, NTD5413NT4G, NTD5414NT4G, NTD5802NT4G, NTD5804NT4G, NTD5805NT4G, IRFB31N20D, NTD5807NT4G, NTD5862N-1G, 2SJ0672, 7N60L-A-TA3, 7N60L-B-TA3, 7N60L-A-TF3, 7N60L-B-TF3, DFP50N06

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