7N60L-B-TF3 MOSFET Datasheet: N-Ch, 650V, 7.4A. Full specification with pinout and replacement list

7N60L-B-TF3 Specs and Replacement

Type Designator: 7N60L-B-TF3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 81 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

7N60L-B-TF3 substitution

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7N60L-B-TF3 datasheet

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UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio... See More ⇒

8.2. Size:349K utc
7n60l-tf3t-t 7n60g-tf3t-t 7n60l-t2q-t 7n60g-t2q-t 7n60l-tq2-t 7n60g-tq2-t 7n60l-tq2-r 7n60g-tq2-r.pdf pdf_icon

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7n60l.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati... See More ⇒

Detailed specifications: NTD5805NT4G, NTD5806NT4G, NTD5807NT4G, NTD5862N-1G, 2SJ0672, 7N60L-A-TA3, 7N60L-B-TA3, 7N60L-A-TF3, IRLB3034, DFP50N06, HY3208P, HY3208M, HY3208B, HY3208PS, HY3208PM, PK502BA, SP8M3