All MOSFET. HY3208PM Datasheet

 

HY3208PM MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY3208PM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 226 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 443 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO3PS

 HY3208PM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY3208PM Datasheet (PDF)

 8.1. Size:739K  hymexa
 hy3208.pdf

HY3208PM HY3208PM

HY3208P/M/B/PS/PMAbsolute Maximum RatingsSymbol Parameter Rating Unit Common Ratings (TC=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range 55 to 175 C -IS Diode Continuous Forward Current TC=25C 120 A Mounted on Large Heat Sink IDM Pulsed Drain Current * T

 8.2. Size:1032K  hymexa
 hy3208ap hy3208am hy3208ab hy3208aps hy3208apm.pdf

HY3208PM HY3208PM

HY3208AP/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin Descriptioneatures F 80V/120ARDS(ON)= 5.5 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGTO-3PS-3L TO-3PM-3SApplications Power Management for Inverter

 9.1. Size:1133K  1
 hy3203c2.pdf

HY3208PM HY3208PM

HY3203C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/120AD D D D D D D DRDS(ON)= 1.9m(typ.) @VGS = 10VRDS(ON)= 2.5m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

 9.2. Size:1133K  hymexa
 hy3203c2.pdf

HY3208PM HY3208PM

HY3203C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/120AD D D D D D D DRDS(ON)= 1.9m(typ.) @VGS = 10VRDS(ON)= 2.5m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FRS440R

 

 
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