2SK1295 Datasheet. Specs and Replacement
Type Designator: 2SK1295 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO220F
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2SK1295 datasheet
8.1. Size:96K renesas
rej03g0918 2sk1298ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.6. Size:52K hitachi
2sk1297.pdf
2SK1297 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1297 Absolute Max... See More ⇒
8.7. Size:48K hitachi
2sk1298.pdf
2SK1298 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3PFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1298 Absolute Maximum Rat... See More ⇒
8.8. Size:38K hitachi
2sk1296.pdf
2SK1296 Silicon N-Channel MOS FET Application TO 220AB High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device 1. Gate Can be driven from 5 V source 1 2. Drain Suitable for motor drive, DC-DC converter, (Flange) power switch and solenoid drive 3. Source 3 Table 1 Absolute Maximum ... See More ⇒
8.9. Size:48K hitachi
2sk1299.pdf
2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3. Source 4. D... See More ⇒
8.10. Size:258K inchange semiconductor
2sk1297.pdf
isc N-Channel MOSFET Transistor 2SK1297 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive ABS... See More ⇒
8.11. Size:265K inchange semiconductor
2sk1298.pdf
isc N-Channel MOSFET Transistor 2SK1298 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB... See More ⇒
8.12. Size:261K inchange semiconductor
2sk1296.pdf
isc N-Channel MOSFET Transistor 2SK1296 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒
8.13. Size:265K inchange semiconductor
2sk1299s.pdf
isc N-Channel MOSFET Transistor 2SK1299S FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.... See More ⇒
8.14. Size:274K inchange semiconductor
2sk1299l.pdf
isc N-Channel MOSFET Transistor 2SK1299L FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.... See More ⇒
Detailed specifications: 2SK1286, 2SK1287, 2SK1288, 2SK1289, 2SK1290, 2SK1292, 2SK1293, 2SK1294, AON7506, 2SK1398, 2SK1399, 2SK1482, 2SK1483, 2SK1484, 2SK1485, 2SK1491, 2SK1492
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