SVF2N65F MOSFET Datasheet: N-Ch, 650V, 2A. Full specification with pinout and replacement list

SVF2N65F Specs and Replacement

Type Designator: SVF2N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 34.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm

Package: TO220F

SVF2N65F substitution

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SVF2N65F datasheet

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SVF2N65F/N/MJ/D 2A 650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS ... See More ⇒

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SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching ... See More ⇒

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