NTD80N02-001 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD80N02-001
Marking Code: 80N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 900 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: DPAK
NTD80N02-001 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD80N02-001 Datasheet (PDF)
ntd80n02-001 ntd80n02-1g ntd80n02t4 ntd80n02 ntd80n02g.pdf
NTD80N02Power MOSFET24 V, 80 A, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX These Devices are Pb-Free and are RoHS Compliant24 V 5.0 mW 80 ATypical Applications Power SuppliesN-Channel ConvertersD
ntd80n02-d.pdf
NTD80N02Power MOSFET24 V, 80 A, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX These Devices are Pb-Free and are RoHS Compliant24 V 5.0 mW 80 ATypical Applications Power SuppliesN-Channel ConvertersD
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