NTD80N02-001 Specs and Replacement
Type Designator: NTD80N02-001
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: DPAK
NTD80N02-001 substitution
- MOSFET ⓘ Cross-Reference Search
NTD80N02-001 datasheet
ntd80n02-001 ntd80n02-1g ntd80n02t4 ntd80n02 ntd80n02g.pdf
NTD80N02 Power MOSFET 24 V, 80 A, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX These Devices are Pb-Free and are RoHS Compliant 24 V 5.0 mW 80 A Typical Applications Power Supplies N-Channel Converters D ... See More ⇒
ntd80n02-d.pdf
NTD80N02 Power MOSFET 24 V, 80 A, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX These Devices are Pb-Free and are RoHS Compliant 24 V 5.0 mW 80 A Typical Applications Power Supplies N-Channel Converters D ... See More ⇒
Detailed specifications: NTD65N03R, NTD65N03R-035, NTD65N03R-1G, NTD6600N, NTD70N03R-001, NTD70N03RG, NTD78N03, NTD80N02, 2N7000, NTD80N02-1G, NTD80N02G, NTD80N02T4, NTD85N02R, NTD85N02R-001, NTD85N02R-1G, NTD85N02RT4, NTD95N02R
Keywords - NTD80N02-001 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: NTD70N03R-001
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