NTD80N02G Datasheet and Replacement
Type Designator: NTD80N02G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: DPAK
NTD80N02G substitution
NTD80N02G Datasheet (PDF)
ntd80n02-001 ntd80n02-1g ntd80n02t4 ntd80n02 ntd80n02g.pdf

NTD80N02Power MOSFET24 V, 80 A, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX These Devices are Pb-Free and are RoHS Compliant24 V 5.0 mW 80 ATypical Applications Power SuppliesN-Channel ConvertersD
ntd80n02-d.pdf

NTD80N02Power MOSFET24 V, 80 A, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX These Devices are Pb-Free and are RoHS Compliant24 V 5.0 mW 80 ATypical Applications Power SuppliesN-Channel ConvertersD
Datasheet: NTD65N03R-1G , NTD6600N , NTD70N03R-001 , NTD70N03RG , NTD78N03 , NTD80N02 , NTD80N02-001 , NTD80N02-1G , IRF630 , NTD80N02T4 , NTD85N02R , NTD85N02R-001 , NTD85N02R-1G , NTD85N02RT4 , NTD95N02R , NTD95N02R-1G , NTD95N02RT4 .
History: SIR494DP | NTD80N02-001 | HCFL65R210
Keywords - NTD80N02G MOSFET datasheet
NTD80N02G cross reference
NTD80N02G equivalent finder
NTD80N02G lookup
NTD80N02G substitution
NTD80N02G replacement
History: SIR494DP | NTD80N02-001 | HCFL65R210



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