AM30N10 MOSFET Datasheet: N-Ch, 100V, 20A. Full specification with pinout and replacement list

AM30N10 Specs and Replacement

Type Designator: AM30N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO252

AM30N10 substitution

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AM30N10 datasheet

..1. Size:262K inchange semiconductor
am30n10.pdf pdf_icon

isc N-Channel MOSFET Transistor AM30N10 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS LED backlighting Power supply Switching applications A... See More ⇒

0.1. Size:296K analog power
am30n10-70d.pdf pdf_icon

Analog Power AM30N10-70D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 78 @ VGS = 10V 26 Low thermal impedance 100 92 @ VGS = 4.5V 25 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co... See More ⇒

0.2. Size:143K analog power
am30n10-70de.pdf pdf_icon

Analog Power AM30N10-70DE N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m ) ID (A) ( rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21 converters and power management in portable and 100 92 @ VGS = 4.5V 20 ... See More ⇒

0.3. Size:86K analog power
am30n10-78d.pdf pdf_icon

Analog Power AM30N10-78D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21 converters and power management in portable and 100 98 @ VGS = 4.5V 19 bat... See More ⇒