FCPF125N65S3 Datasheet. Specs and Replacement

Type Designator: FCPF125N65S3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO220F

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FCPF125N65S3 substitution

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FCPF125N65S3 datasheet

 ..1. Size:311K  onsemi
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FCPF125N65S3

CPF125N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 125 mW @ 10 V 24 A charge performance. This advanc... See More ⇒

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FCPF125N65S3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor FCPF125N65S3 FEATURES With To-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒

 9.1. Size:785K  1
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FCPF125N65S3

May 2016 FCPF150N65F N-Channel SuperFET II FRFET MOSFET 650 V, 24 A, 150 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 133 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 72 nC) a... See More ⇒

 9.2. Size:289K  1
fcpf165n65s3l1.pdf pdf_icon

FCPF125N65S3

FCPF165N65S3L1 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 165 mW @ 10 V 19 A charge performance. This adv... See More ⇒

Detailed specifications: BUK437-500B, BUK637-500B, CSD30N30, FCH067N65S3, FCP067N65S3, FCP099N65S3, FCP190N65S3, FCP290N80, STP65NF06, FCPF400N80ZCN, FDD9407, FMP60N280S2HF, IPA032N06N3, IPA041N04N, IPA057N06N3, IPA093N06N3, IPA60R120C7

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