IPA60R280P7 Datasheet. Specs and Replacement

Type Designator: IPA60R280P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO220F

IPA60R280P7 substitution

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IPA60R280P7 datasheet

 ..1. Size:1105K  infineon
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IPA60R280P7

IPA60R280P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET... See More ⇒

 ..2. Size:201K  inchange semiconductor
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IPA60R280P7

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280P7 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒

 0.1. Size:1097K  infineon
ipa60r280p7s.pdf pdf_icon

IPA60R280P7

IPA60R280P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE... See More ⇒

 4.1. Size:2865K  infineon
ipa60r280p6 ipp60r280p6 ipw60r280p6.pdf pdf_icon

IPA60R280P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPP60R280P6, IPA60R280P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

Detailed specifications: IPA041N04N, IPA057N06N3, IPA093N06N3, IPA60R120C7, IPA60R170CFD7, IPA60R1K0CE, IPA60R1K5CE, IPA60R280CFD7, IRF1405, IPA60R600P7, IPA65R1K0CE, IPA65R400CE, IPAN50R500CE, IPAN60R800CE, IPB073N15N5, IPB090N06N3, IPB156N22NFD

Keywords - IPA60R280P7 MOSFET specs

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