IPB090N06N3 PDF and Equivalents Search

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB090N06N3 FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very low on-resistance Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35... See More ⇒

IPB090N06N3G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-So... See More ⇒

pe % # ! % (>.;?6?@ %>E Features V 4 D Q 2CD CG D49 ?8 ') - . 7@B -'*- R m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC I D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H R AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 R D n) Q F2=2?496 D6CD65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Q "2=@86? 7B66... See More ⇒

IPB09N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.9 m DS(on),max Qualified according to JEDEC1) for target applications I 50 A D N-channel - Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) PG-TO263-3-2 Superior thermal res... See More ⇒

pe %% # ! % # ! % (>.;?6?@ %>E Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m - @? >2H Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H D n) AB@5E4D ) ' Q /6BI =@G @? B6C CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Q "2=@86? 7B66 244@B5 ?... See More ⇒

IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I 7 D Q H35>5?B=1... See More ⇒

IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.9 m DS(on),max N-channel I 50 A D Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1... See More ⇒

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35... See More ⇒

Isc N-Channel MOSFET Transistor IPB097N08N3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒