All MOSFET. IRFI4228 Datasheet

 

IRFI4228 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFI4228
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 73 nC
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO220F

 IRFI4228 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFI4228 Datasheet (PDF)

 ..1. Size:302K  international rectifier
 irfi4228pbf.pdf

IRFI4228 IRFI4228

PD - 97228IRFI4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m:12.2 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C61 A and Pass Switch Applicatio

 ..2. Size:200K  inchange semiconductor
 irfi4228.pdf

IRFI4228 IRFI4228

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4228FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

 7.1. Size:245K  international rectifier
 irfi4229pbf.pdf

IRFI4228 IRFI4228

PD - 97201BIRFI4229PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max250 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.300 V Energy Recovery and Pass Switch Applicationsl Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C32 A and Pass Switch Applications

 7.2. Size:290K  international rectifier
 irfi4227pbf.pdf

IRFI4228 IRFI4228

PD - 97036BIRFI4227PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 47 A and Pass Switch Applications

 7.3. Size:607K  infineon
 irfi4229pbf.pdf

IRFI4228 IRFI4228

IRFI4229PbF Features HEXFET Power MOSFET Advanced Process Technology Key Parameters Key Parameters Optimized for PDP Sustain, VDS max 250 V Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power VDS (Avalanche) typ. 300 V Dissipation in PDP Sustain, Energy Recovery RDS(ON) typ. @ 10V 38 m and Pass Switch Applications Low QG

 7.4. Size:201K  inchange semiconductor
 irfi4229.pdf

IRFI4228 IRFI4228

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4229FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

 7.5. Size:200K  inchange semiconductor
 irfi4227.pdf

IRFI4228 IRFI4228

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFI4227FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FDD8896

 

 
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