IXFA34N65X2 MOSFET Datasheet: N-Ch, 650V, 34A. Full specification with pinout and replacement list

IXFA34N65X2 Specs and Replacement

Type Designator: IXFA34N65X2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO263

IXFA34N65X2 substitution

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IXFA34N65X2 datasheet

..1. Size:205K ixys
ixfa34n65x2 ixfp34n65x2 ixfh34n65x2.pdf pdf_icon

X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2 RDS(on) 100m IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGS... See More ⇒

..2. Size:204K inchange semiconductor
ixfa34n65x2.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFA34N65X2 FEATURES With TO-263(D2PAK) packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain... See More ⇒

9.1. Size:155K ixys
ixfa36n30p3 ixfp36n30p3.pdf pdf_icon

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9.2. Size:310K ixys
ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf pdf_icon

VDSS = 200V X3-Class HiPERFETTM IXFY36N20X3 ID25 = 36A Power MOSFET IXFA36N20X3 RDS(on) 45m IXFP36N20X3 N-Channel Enhancement Mode TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V G S VDGR TJ = 25 C to 150 C, RGS = 1M 200 V D (Tab) VGSS Continuous 20 V TO-220... See More ⇒