MMD80R900P MOSFET Datasheet: N-Ch, 800V, 6A. Full specification with pinout and replacement list

MMD80R900P Specs and Replacement

Type Designator: MMD80R900P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22.4 nS

Cossⓘ - Output Capacitance: 508 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

MMD80R900P substitution

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MMD80R900P datasheet

..1. Size:208K inchange semiconductor
mmd80r900p.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMD80R900P FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor contorl DC-DC conventers ABSOLUTE MAXIMUM RATINGS(... See More ⇒

0.1. Size:1279K magnachip
mmd80r900prh.pdf pdf_icon

MMD80R900P Datasheet MMD80R900P 800V 0.9 N-channel MOSFET Description MMD80R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo... See More ⇒

0.2. Size:1323K magnachip
mmd80r900pcrh.pdf pdf_icon

MMD80R900PC Datasheet MMD80R900PC 800V 0.9 N-channel MOSFET Description MMD80R900PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as... See More ⇒

0.3. Size:310K inchange semiconductor
mmd80r900prh.pdf pdf_icon

isc N-Channel MOSFET Transistor MMD80R900PRH FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒