NTGD4161PT1G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTGD4161PT1G
Marking Code: S8
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.6
nC
trⓘ - Rise Time: 9.2
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16
Ohm
Package:
TSOP-6
NTGD4161PT1G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTGD4161PT1G
Datasheet (PDF)
..1. Size:67K onsemi
ntgd4161p-d ntgd4161pt1g.pdf
NTGD4161PPower MOSFET-30 V, -2.3 A, Dual P-Channel, TSOP-6Features Fast Switching Speed Low Gate Chargehttp://onsemi.com Low RDS(on) Independently Connected Devices to Provide Design FlexibilityV(BR)DSS RDS(on) Max This is a Pb-Free Device160 mW @ -10 VApplications-30 V280 mW @ -4.5 V Load Switch Battery Protection Portable Devices Like
5.1. Size:2406K cn vbsemi
ntgd4161p.pdf
NTGD4161Pwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable A
7.1. Size:99K onsemi
ntgd4167c.pdf
NTGD4167CPower MOSFETComplementary, 30 V, +2.9/-2.2 A,TSOP-6 DualFeatures Complementary N-Channel and P-Channel MOSFEThttp://onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On ResistanceV(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response90 mW @ 4.5 V 2.6 AN-Ch Independently Co
7.2. Size:130K onsemi
ntgd4169f ntgd4169ft1g.pdf
NTGD4169FPower MOSFET andSchottky Diode30 V, 2.9 A, N-Channel with SchottkyBarrier Diode, TSOP-6Featureshttp://onsemi.com Fast Switching N-CHANNEL MOSFET Low Gate ChangeV(BR)DSS RDS(on) MaxID Max Low RDS(on)90 mW @ 4.5 V 2.6 A Low VF Schottky Diode30 V Independently Connected Devices to Provide Design Flexibility125 mW @ 2.5 V 2.2 A This is
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