All MOSFET. NTGS3136PT1G Datasheet

 

NTGS3136PT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTGS3136PT1G
   Marking Code: SD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 274 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TSOP-6

 NTGS3136PT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTGS3136PT1G Datasheet (PDF)

 ..1. Size:113K  onsemi
ntgs3136p-d ntgs3136pt1g.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3136PPower MOSFET-20 V, -5.8 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Ratinghttp://onsemi.com Fast Switching This is a Pb-Free DeviceV(BR)DSS RDS(ON) TYP ID MAXApplications25 mW @ -4.5 V -5.1 A Optimized for Battery and Load Management Applications in-20 V 32 mW @ -2.5 V -4.5 APortable Equipment41 mW @ -1.8 V -

 ..2. Size:1720K  cn vbsemi
ntgs3136pt1g.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3136PT1Gwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mm

 5.1. Size:201K  onsemi
ntgs3136p nvgs3136p.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3136P, NVGS3136PMOSFET Power, Single,P-Channel, TSOP-6-20 V, -5.8 AFeatureswww.onsemi.com Low RDS(on) in TSOP-6 Package 1.8 V Gate RatingV(BR)DSS RDS(ON) TYP ID MAX Fast Switching25 mW @ -4.5 V -5.1 A NV Prefix for Automotive and Other Applications Requiring Unique-20 V 32 mW @ -2.5 V -4.5 ASite and Control Change Requirements; AEC-Q101 Qualified an

 7.1. Size:87K  onsemi
ntgs3130n ntgs3130nt1g.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3130NPower MOSFET20 V, 5.6 A SingleN-Channel, TSOP-6Features Leading Edge Trench Technology for Low On Resistancehttp://onsemi.com Low Gate Charge for Fast Switching Small Size (3 x 2.75 mm) TSOP-6 PackageV(BR)DSS RDS(on) mAX ID Max This is a Pb-Free Device24 mW @ 4.5 V 5.6 AApplications20 V DC-DC Converters32 mW @ 2.5 V 4.9 A Lithium Ion Ba

 9.1. Size:90K  onsemi
ntgs3443bt1g.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3443BPower MOSFET-20 V, -4.2 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 2.5 V Gate Ratinghttp://onsemi.com Fast Switching This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications60 mW @ -4.5 V -3.7 A Optimized for Battery and Load Management Applications in-20 V 90 mW @ -2.7 V -3.1 APortable Equipment100 mW @ -2.5 V

 9.2. Size:104K  onsemi
ntgs3455t1.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3455T1MOSFET-3.5 Amps, -30 VoltsP-Channel TSOP-6Features http://onsemi.com Ultra Low RDS(on)V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life-30 V 100 mW @ -10 V -3.5 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is AvailableP-Channel1 2 5 6ApplicationsDRAIN Power Management in Portable and Battery-Powered Products,

 9.3. Size:89K  onsemi
ntgs3447pt1g.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3447PPower MOSFET-12 V, -5.3 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Ratinghttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(on) MAX ID MAXApplications Battery Switch and Load Management Applications in Portable40 mW @ -4.5 V -4.7 AEquipment-12 V 53 mW @ -2.5 V -4.1 A High Side Load Switch PA Switch 72

 9.4. Size:100K  onsemi
ntgs3441t1 nvgs3441.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3441, NVGS3441Power MOSFET1 Amp, 20 Volts, P-Channel TSOP-6Features Ultra Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package1 AMPERE NV Prefix for Automotive and Other Applications Requiring Unique20 VOLTSSite and Control Change Requirements; AEC-Q101 Qualified andRDS(on) = 90 mWPPAP Capable

 9.5. Size:99K  onsemi
ntgs3443t1.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3443T1Power MOSFET4.4 Amps, 20 VoltsP-Channel TSOP-6http://onsemi.comFeatures Ultra Low RDS(on)4.4 AMPERES Higher Efficiency Extending Battery Life20 VOLTS Miniature TSOP-6 Surface Mount PackageRDS(on) = 65 mW Pb-Free Package is AvailableApplications P-Channel1 2 5 6 Power Management in Portable and Battery-Powered Products, i.e.: Cellular and

 9.6. Size:89K  onsemi
ntgs3441bt1g.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3441BPower MOSFET-20 V, -3.5 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 2.5 V Gate Ratinghttp://onsemi.com This is a Pb-Free DeviceApplicationsV(BR)DSS RDS(on) MAX ID MAX Battery Switch and Load Management Applications in Portable90 mW @ -4.5 V -3.0 AEquipment-20 V High Side Load Switch130 mW @ -2.5 V -2.4 A Portable D

 9.7. Size:106K  onsemi
ntgs3443 nvgs3443.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3443, NVGS3443Power MOSFET4.4 Amps, 20 VoltsP-Channel TSOP-6http://onsemi.comFeatures Ultra Low RDS(on)4.4 AMPERES Higher Efficiency Extending Battery Life20 VOLTS Miniature TSOP-6 Surface Mount PackageRDS(on) = 65 mW These Devices are Pb-Free and are RoHS Compliant NVGS Prefix for Automotive and Other Applications RequiringP-ChannelUnique Site a

 9.8. Size:132K  onsemi
ntgs3433t1.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3433T1MOSFET-3.3 Amps, -12 VoltsP-Channel TSOP-6http://onsemi.comFeatures Ultra Low RDS(on)V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life-12 V 75 mW @ -4.5 V -3.3 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is AvailableP-Channel1 2 5 6ApplicationsDRAIN Power Management in Portable and Battery-Powered Products,

 9.9. Size:136K  onsemi
ntgs3446 ntgs3446t1.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3446Power MOSFET20 V, 5.1 A SingleN-Channel, TSOP6Features Ultra Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate DriveV(BR)DSS RDS(on) TYP ID MAX Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified20 V 36 mW @ 4.5 V 5.1 A IDSS Specified at Elevated Temperature Pb-Free Package is Available

 9.10. Size:64K  onsemi
ntgs3441p-d ntgs3441pt1g.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3441PPower MOSFET-20 V, -3.16 A, Single P-Channel TSOP-6Features Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losseshttp://onsemi.com TSOP-6 Surface Mount Package This is a Pb-Free DeviceV(BR)DSS RDS(ON) TYP ID MAXApplications 91 mW @ 4.5 V High Side Switch in DC-DC Converters-20 V 144 mW @ 2.7 V -3.16 A Batter

 9.11. Size:115K  onsemi
ntgs3433t1g.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3433T1MOSFET-3.3 Amps, -12 VoltsP-Channel TSOP-6http://onsemi.comFeatures Ultra Low RDS(on)V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life-12 V 75 mW @ -4.5 V -3.3 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is AvailableP-Channel1 2 5 6ApplicationsDRAIN Power Management in Portable and Battery-Powered Products,

 9.12. Size:834K  cn vbsemi
ntgs3443t1g.pdf

NTGS3136PT1G NTGS3136PT1G

NTGS3443T1Gwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP

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