NTHD3101FT1G Datasheet. Specs and Replacement

Type Designator: NTHD3101FT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.7 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: CHIPFET

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NTHD3101FT1G datasheet

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NTHD3101FT1G

NTHD3101F Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http //onsemi.com Features Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics 64 mW @ -4.5 V -20 V -4.4 A Indepe... See More ⇒

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NTHD3101FT1G

NTHD3101F Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics V(BR)DSS RDS(on) TYP ID MAX Independent Pinout to each Device to E... See More ⇒

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NTHD3101FT1G

AND PIN A NTHD3100C Power MOSFET 20 V, +3.9 A /-4.4 A, Complementary ChipFETt Features http //onsemi.com Complementary N-Channel and P-Channel MOSFET Small Size, 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) Typ ID MAX Leadless SMD Package Provides Great Thermal Characteristics 58 mW @ 4.5 V N-Channel Trench P-Channel for Low On Resistance 3.9 A 20 V 77 mW @ 2... See More ⇒

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NTHD3101FT1G

NTHD3102C Power MOSFET Complementary, 20 V, +5.5 A /-4.2 A, ChipFETt Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics ID MAX V(BR)DSS RDS(on) TYP (Note 1) Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve ... See More ⇒

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Detailed specifications: NTGS3443T1, NTGS3446T1, NTGS3447PT1G, NTGS3455T1, NTGS4111PT1, NTGS4141NT1G, NTGS5120PT1G, NTHD2110TT1G, 5N60, NTHD3101FT3, NTHD3133PFT1G, NTHD4N02FT1, NTHD4P02FT1G, NTHD5904NT1, NTHD5904NT3, NTHS2101PT1, NTHS2101PT1G

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