NTHS2101PT1 Datasheet. Specs and Replacement

Type Designator: NTHS2101PT1  📄📄 

Marking Code: D4

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V

Qg ⓘ - Total Gate Charge: 15 nC

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: CHIPFET

NTHS2101PT1 substitution

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NTHS2101PT1 datasheet

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NTHS2101PT1

NTHS2101P Power MOSFET -8.0 V, -7.5 A P-Channel ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package http //onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 making it an Ideal Device for Applications where Board Space is at a Premium V(BR)DSS Ultra Low RDS(on) TYP ID MAX Low Profile (... See More ⇒

Detailed specifications: NTHD2110TT1G, NTHD3101FT1G, NTHD3101FT3, NTHD3133PFT1G, NTHD4N02FT1, NTHD4P02FT1G, NTHD5904NT1, NTHD5904NT3, IRF2807, NTHS2101PT1G, NTHS4101PT1G, NTHS4111PT1G, NTHS4166NT1G, NTHS4501NT1, NTHS4501NT1G, NTHS5402T1, NTHS5404T1G

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.