All MOSFET. NTJD4152PT1G Datasheet

 

NTJD4152PT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTJD4152PT1G
   Marking Code: TK
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45 V
   |Id|ⓘ - Maximum Drain Current: 0.88 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.2 nC
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: SOT-363

 NTJD4152PT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTJD4152PT1G Datasheet (PDF)

 ..1. Size:72K  onsemi
 ntjd4152pt1g.pdf

NTJD4152PT1G NTJD4152PT1G

NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88Features Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V Load/Power Mana

 5.1. Size:126K  onsemi
 ntjd4152p nvjd4152p.pdf

NTJD4152PT1G NTJD4152PT1G

NTJD4152P, NVJD4152PMOSFET Dual, P-Channel,Trench Small Signal, ESDProtected, SC-8820 V, 0.88 AFeatureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique-20 VSite an

 5.2. Size:88K  onsemi
 ntjd4152p.pdf

NTJD4152PT1G NTJD4152PT1G

NTJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88http://onsemi.comFeatures Leading Trench Technology for Low RDS(ON) PerformanceV(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent)215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available-20 V345 mW @ -2.5 V -0.88 AApplications600 mW @ -1.8 V

 7.1. Size:142K  onsemi
 ntjd4158c.pdf

NTJD4152PT1G NTJD4152PT1G

NTJD4158CSmall Signal MOSFET30 V/-20 V, +0.25/-0.88 A,Complementary, SC-88Featureshttp://onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 VN-Ch This is a Pb-Free Device 0.25 A30 V1.5 W @ 2.5 VApplications215 mW @ -4.5 VP-Ch-0.88 A-20 V

 7.2. Size:142K  onsemi
 ntjd4158c nvjd4158c.pdf

NTJD4152PT1G NTJD4152PT1G

NTJD4158C, NVJD4158CMOSFET Small Signal,Complementary, SC-8830 V/-20 V, +0.25/-0.88 AFeatureswww.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring UniqueN-Ch0.25 A30 VSite and Cont

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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