NTJS4151PT1G PDF and Equivalents Search

 

NTJS4151PT1G Specs and Replacement


   Type Designator: NTJS4151PT1G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 1700 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-363
 

 NTJS4151PT1G substitution

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NTJS4151PT1G datasheet

 ..1. Size:143K  onsemi
ntjs4151p ntjs4151pt1 ntjs4151pt1g.pdf pdf_icon

NTJS4151PT1G

NTJS4151P Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88 Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http //onsemi.com SC-88 Small Outline (2x2 mm) for Maximum Circuit Board V(BR)DSS RDS(on) Typ ID Max Utilization, Same as SC-70-6 47 mW @ -4.5 V Gate Diodes for ESD Protection -20 V 70 mW @ -2.5 V -4.2 A Pb-Free Package is Avai... See More ⇒

 8.1. Size:81K  onsemi
ntjs4160n-d ntjs4160nt1g.pdf pdf_icon

NTJS4151PT1G

NTJS4160N Power MOSFET 30 V, 3.2 A, Single N-Channel, SC-88 Features Offers an Low RDS(on) Solution in the SC-88 Package Low Profile (... See More ⇒

 9.1. Size:102K  onsemi
ntjs4405n.pdf pdf_icon

NTJS4151PT1G

NTJS4405N Small Signal MOSFET 25 V, 1.2 A, Single, N-Channel, SC-88 Features Advance Planar Technology for Fast Switching, Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available 249 mW @ 4.5 V 25 V 1.2 A Applications 299 mW @ 2.7 V Boost and Buck Converter Load Switch N-Channel Batt... See More ⇒

 9.2. Size:191K  onsemi
ntjs4405n nvjs4405n.pdf pdf_icon

NTJS4151PT1G

NTJS4405N, NVJS4405N MOSFET Single, N-Channel, Small Signal, SC-88 25 V, 1.2 A http //onsemi.com Features V(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on) 249 mW @ 4.5 V Higher Efficiency Extending Battery Life 25 V 1.2 A 299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co... See More ⇒

Detailed specifications: NTJD4152PT1G , NTJD4158CT1G , NTJS3151PT1G , NTJS3151PT2 , NTJS3157NT1G , NTJS3157NT2 , NTJS3157NT4 , NTJS4151PT1 , MMIS60R580P , NTJS4160NT1G , NTJS4405NT1 , NTJS4405NT4 , NTK3043NAT5G , NTK3043NT1G , NTK3134NT1G , NTK3139PT1G , NTK3142PT1G .

History: NP90N055NUK

Keywords - NTJS4151PT1G MOSFET specs

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