NTK3043NT1G Datasheet and Replacement
Type Designator: NTK3043NT1G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 0.21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 8.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: SOT-723
- MOSFET Cross-Reference Search
NTK3043NT1G Datasheet (PDF)
ntk3043n-d ntk3043nat5g ntk3043nt1g.pdf

NTK3043NPower MOSFET20 V, 285 mA, N-Channel with ESDProtection, SOT-723Featureshttp://onsemi.com Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)
ntk3043n.pdf

NTK3043NPower MOSFET20 V, 285 mA, N-Channel with ESDProtection, SOT-723Featureshttp://onsemi.com Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)
lntk3043pt5g s-lntk3043pt5g.pdf

LESHAN RADIO COMPANY, LTD.Power MOSFET20 V, 285 mA, P-Channel with ESDProtection, SOT-723LNTK3043PT5GFeaturesS-LNTK3043PT5G Enables High Density PCB Manufacturing 44% Smaller Footprint than SC-89 and 38% Thinner than SC-89V(BR)DSS RDS(on) TYP ID Max Low Voltage Drive Makes this Device Ideal for Portable Equipment1.5 W @ 4.5 V Low Threshold Levels, VGS(TH)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - NTK3043NT1G MOSFET datasheet
NTK3043NT1G cross reference
NTK3043NT1G equivalent finder
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History: VBNC1303 | IRFS4010PBF



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