NTLGF3402PT1G Datasheet. Specs and Replacement
Type Designator: NTLGF3402PT1G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: DFN6
NTLGF3402PT1G substitution
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NTLGF3402PT1G datasheet
ntlgf3402p ntlgf3402pt1g.pdf
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ntlgf3501nt2g.pdf
NTLGF3501N Power MOSFET and Schottky Diode 20 V, 4.6 A FETKY), N-Channel, 2.0 A Schottky Barrier Diode, DFN6 http //onsemi.com Features MOSFET Flat Lead 6 Terminal Package 3x3x1 mm V(BR)DSS RDS(on) TYP ID TYP Reduced Gate Charge to Improve Switching Response Enhanced Thermal Characteristics 20 V 70 mW @ 4.5 V 4.6 A This is a Pb-Free Device SCHOTTKY DIODE Applicat... See More ⇒
Detailed specifications: NTJS4160NT1G, NTJS4405NT1, NTJS4405NT4, NTK3043NAT5G, NTK3043NT1G, NTK3134NT1G, NTK3139PT1G, NTK3142PT1G, IRF740, NTLGF3501NT2G, NTLJD3119CTAG, NTLJD3119CTBG, NTLJD3182FZTAG, NTLJD3182FZTBG, NTLJF3117PT1G, NTLJF3117PTAG, NTLJF3118NTAG
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