NTLJD3182FZTAG Datasheet. Specs and Replacement
Type Designator: NTLJD3182FZTAG 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: WDFN6
NTLJD3182FZTAG substitution
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NTLJD3182FZTAG datasheet
ntljd3182fztag ntljd3182fztbg.pdf
NTLJD3182FZ Power MOSFET and Schottky Diode -20 V, -4.0 A, mCoolt Single P-Channel & Schottky Barrier Diode, ESD Features WDFN 2x2 mm Package with Exposed Drain Pads for Excellent http //onsemi.com Thermal Conduction Lowest RDS(on) Solution in 2x2 mm Package P-CHANNEL MOSFET Footprint Same as SC-88 Package V(BR)DSS RDS(on) Max ID Max Low Profile (... See More ⇒
ntljd3115p.pdf
NTLJD3115P Power MOSFET -20 V, -4.1 A, mCoolt Dual P-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package 100 mW @ -4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive ... See More ⇒
Detailed specifications: NTK3043NT1G, NTK3134NT1G, NTK3139PT1G, NTK3142PT1G, NTLGF3402PT1G, NTLGF3501NT2G, NTLJD3119CTAG, NTLJD3119CTBG, IRF540, NTLJD3182FZTBG, NTLJF3117PT1G, NTLJF3117PTAG, NTLJF3118NTAG, NTLJF4156NT1G, NTLJF4156NTAG, NTLJS1102PTAG, NTLJS1102PTBG
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