NTLUD3A260PZTBG
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTLUD3A260PZTBG
Marking Code: AD
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 1.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.2
nC
trⓘ - Rise Time: 32.3
nS
Cossⓘ -
Output Capacitance: 34
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package: UDFN6
NTLUD3A260PZTBG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTLUD3A260PZTBG
Datasheet (PDF)
0.1. Size:120K onsemi
ntlud3a260pztag ntlud3a260pztbg.pdf
NTLUD3A260PZPower MOSFET-20 V, -2.1 A, mCoolt Dual P-Channel,ESD, 1.6x1.6x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 1.6x1.6x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX ESD Protected These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 200 mW
2.1. Size:123K onsemi
ntlud3a260pz.pdf
NTLUD3A260PZPower MOSFET-20 V, -2.1 A, mCoolt Dual P-Channel,ESD, 1.6x1.6x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low Profile UDFN 1.6x1.6x0.55 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX ESD Protected These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 200 mW
7.1. Size:123K onsemi
ntlud3a50pz.pdf
NTLUD3A50PZPower MOSFET-20 V, -5.6 A, mCoolt Dual P-Channel,2.0x2.0x0.55 mm UDFN PackageFeatures UDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConductionMOSFET Low RDS(on)V(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS50 mW @ -4.5 V
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